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2024-11-27 加入
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Excellent Reliability in Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Device With Oxygen-Doped ITO Electrodes
8天前
已完结
Ferroelectric Hafnium Oxide: A Potential Game‐Changer for Nanoelectronic Devices and Systems
8天前
已完结
Revealing the Influence of Dopants on the Properties of Fluorite Structure Ferroelectrics
8天前
已完结
Stabilization of Tetragonal Phase in Hafnium Zirconium Oxide by Cation Doping for High-K Dielectric Insulators
8天前
已完结
Tetravalent doping in hafnium-zirconium oxides to lower polarization switching voltage
8天前
已完结
Excellent Reliability in Hf₀.₅Zr₀.₅O₂ Based Ferroelectric Device With Oxygen-Doped ITO Electrodes
17天前
已完结
Endurance Enhancement in Hafnia-Based Ferroelectric Capacitor Through Anti-Ferroelectric Zirconia Seed Layer for Memory Applications
17天前
已完结
In Situ O₂ Plasma-Treated HfO₂–ZrO₂ Superlattice HZO FeRAMs Exhibiting Enhanced Remnant Polarization and Improved Endurance Performance
17天前
已完结
Impact of Al-Doping on Ferroelectricity and Reliability of HfZrO Film Under High Temperature Annealing
17天前
已完结
Experimental Demonstration of Resonant Adiabatic Writing and Computing in Ferroelectric Capacitive Memory Array for Energy-Efficient Edge AI
26天前
已完结
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