Lv11
40 积分 2025-01-15 加入
Kinetics model for thermal selective etching of Si1−xGex in F2/Ar
3小时前
已完结
Selective Ru or Co Etch for 3nm Applications
1个月前
已完结
Hafnia-Based Ferroelectric Transistor with Poly-Si Gates for Gate-First Three-Dimensional NAND Structures
1个月前
已完结
Vertical ferroelectric thin-film transistor array with a 10-nm gate length for high-density three-dimensional memory applications
1个月前
已完结
Paving the Way for Pass Disturb-Free Vertical NAND Storage via a Dedicated and String-Compatible Pass Gate
1个月前
已完结
Superior QLC Retention Enhancement of a Large Memory Window FEFET Through Gate Stack Engineering
1个月前
已关闭
The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory Applications
1个月前
已关闭
REMNA: Variation-Resilient and Energy-Efficient MLC FeFET Computing-in-Memory Using NAND Flash-Like Read and Adaptive Control
1个月前
已关闭
HfO2-Based Junctionless FeFET Array on FDSOI Platform for NAND Memory Applications
1个月前
已关闭
A Multi-Bit CAM Design With Ultra-High Density and Energy Efficiency Based on FeFET NAND
1个月前
已完结