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28 积分 2026-01-17 加入
Self‐Rectifying Second Order Memristive Behavior in WO 3 Films for Neuromorphic Computing Applications
7小时前
已完结
Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices
1个月前
已完结
Low power W:AlOx/WOx bilayer resistive switching structure based on conductive filament formation and rupture mechanism
1个月前
已完结
Oxygen vacancy modulated amorphous tungsten oxide films for fast-switching and ultra-stable dual-band electrochromic energy storage smart windows
1个月前
已完结
Effect of variation in glancing angle deposition on resistive switching property of WO3 thin films for RRAM devices
1个月前
已完结
Vacancy associates-rich ultrathin nanosheets for high performance and flexible nonvolatile memory device
1个月前
已完结
Electric Field‐Induced Area Scalability toward the Multilevel Resistive Switching
1个月前
已完结
Research on Pt/NiOx/WO3-x:Ti/W Multijunction Memristors with Synaptic Learning and Memory Functions
1个月前
已完结
Role of oxygen vacancies in crystalline WO3
1个月前
已完结
In-situ Growth of WO3/Bi2WO6 Heterojunctions on Carbon Fiber Cloth: Design, Morphology Modulation and Photocatalytic Performance
1个月前
已完结
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