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90 积分 2025-04-24 加入
High-mobility AlGaN/GaN heterostructures directly grown on diamond (111) substrates using a high-temperature physical-vapor-deposition AlN nucleation layer
5个月前
已关闭
AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al0.9Ga0.1N current spreading layer
8个月前
已完结
Realization of homojunction PN AlN diodes
9个月前
已完结
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