| 标题 |
Improvements in the device characteristics of IZO-based transparent thin-film transistors with co-sputtered HfO2–Al2O3 gate dielectrics |
| 网址 | |
| DOI | |
| 其它 |
期刊:Current Applied Physics 作者:Heegeun Son; Jeongsoo Kim; Jungil Yang; Dongkyu Cho; Moonsuk Yi 出版日期:2011-07-01 |
| 求助人 | |
| 下载 | 求助已完成,仅限求助人或该文件上传人下载。 |
PDF的下载单位、IP信息已删除
(2025-6-4)