| 标题 |
Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy
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| 网址 | |
| DOI |
暂未提供,该求助的时间将会延长,查看原因?
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| 其它 | Appl. Phys. Lett. 89, 042103 (2006) |
| 求助人 | |
| 下载 | 暂无链接,等待应助者上传 |
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(2025-6-4)