| 标题 |
3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Reliability 作者:Jin-xin Zhang; Chao-hui He; Hong-xia Guo; Du Tang; Cen Xiong; et al 出版日期:2015-07-03 |
| 求助人 | |
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(2025-6-4)