| 标题 |
[高分] N. Rassoul, “IGZO front-gated TFTs for 3D DRAMs: Process and device advancement”, SSDM, 2021, J-6-03
N.Rassoul，“用于3D DRAM的IGZO前栅TFT：工艺和器件进步”，SSDM，2021，J-6-03
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| 网址 |
求助人暂未提供
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| DOI |
暂未提供，该求助的时间将会延长，查看原因？
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| 其它 | L. Magnarin et al., "A Correlative Analysis Flow for Electrical and Structural Characterization of IGZO Transistors," 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, Singapore, 2022, pp. 1-4, doi: 10.1109/IPFA55383.2022.9915759.这篇文章参考文献的第6篇 |
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| 下载 | 该求助完结已超 24 小时，文件已从服务器自动删除，无法下载。 |
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