| 标题 |
Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs |
| 网址 | |
| DOI | |
| 其它 |
期刊:International Journal of High Speed Electronics and Systems 作者:Henry H. Radamson; Jun Luo; Changliang Qin; Huaxiang Yin; Huilong Zhu; et al 出版日期:2017 |
| 求助人 | |
| 下载 |
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(2025-6-4)