| 标题 |
First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 1011, SS of 68 mV/dec, Normal-off Operation and High Positive Gate Bias Stability |
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| DOI | |
| 其它 |
期刊:2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 作者:Jie Zhang; Zhuocheng Zhang; Zehao Lin; Ke Xu; Hongyi Dou; et al 出版日期:2023 |
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(2025-6-4)