| 标题 |
An Atomically Resolved Schottky Barrier Height Approach for Bridging the Gap between Theory and Experiment at Metal–Semiconductor Heterojunctions |
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| DOI | |
| 其它 |
期刊:ACS Applied Materials & Interfaces 作者:V. Sorkin; Hangbo Zhou; Zhi Gen Yu; Kah‐Wee Ang; Yong‐Wei Zhang 出版日期:2024-04-22 |
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(2025-6-4)