| 标题 |
A novel SiGe GAA transistor with trench removal and backside self-aligned contact for process variations suppression and circuit performance improvement |
| 网址 | |
| DOI | |
| 其它 |
期刊:Microelectronics Journal 作者:Jiawei Wang; Haoyan Liu; Longyu Sun; Shiqi Cao; Fei Zhao; et al 出版日期:2026-12-01 |
| 求助人 | |
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(2025-6-4)