| 标题 |
 Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements 偏压引起的SiC MOSFET阈值电压不稳定性测量的时间依赖性
相关领域
负偏压温度不稳定性
不稳定性
阈值电压
MOSFET
场效应晶体管
材料科学
量子隧道
氧化物
晶体管
辐照
凝聚态物理
电压
电子
光电子学
分析化学（期刊）
栅氧化层
物理
化学
核物理学
机械
量子力学
色谱法
冶金
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Abstract: We have observed significant instability in the threshold voltage of 4H-SiC metal–oxide–semiconductor field-effect transistors due to gate-bias stressing. This effect has a strong measurement time dependence. For example, a 20-μs-long gate ramp used to measure the I– V characteristic and extract a threshold voltage was found to result in a VT instability three to four times greater than that measured with a 1-s-long gate ramp. The VT instability was three times greater in devices that did not receive a NO postoxidation anneal compared with those that did. This instability effect is consistent with electrons directly tunneling in and out of near-interfacial oxide traps, which in irradiated Si MOS was attributed to border traps. |
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