| 标题 |
The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Thibaud Denneulin; David Cooper; Jean-Michel Hartmann; Jean-Luc Rouviere 出版日期:2012-11-01 |
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(2025-6-4)