| 标题 |
Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC |
| 网址 | |
| DOI | |
| 其它 |
期刊:Applied Physics Letters 作者:J. Wong-Leung; B. G. Svensson 出版日期:2008-04-07 |
| 求助人 | |
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(2025-6-4)