| 标题 |
A 750V recessed-emitter-trench IGBT with recessed-dummy-trench structure featuring low switching losses |
| 网址 | |
| DOI | |
| 其它 |
期刊:2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 作者:Yao Yao; Haihui Luo; Qiang Xiao; Chunlin Zhu; Haibo Xiao; et al 出版日期:2018-07-31 |
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(2025-6-4)