| 标题 |
Impact of Al content in the n-AlGaN hole current confinement layer on the performance of GaN-based VCSELs |
| 网址 | |
| DOI |
10.1364/oe.590892
doi
|
| 其它 |
期刊:Optics Express 作者:Xiantian Shi; Shun Gu; Ya-Dan Zhu; Yifan Zhang; Zhigang Jia; et al 出版日期:2026-03-27 |
| 求助人 | |
| 下载 |
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(2025-6-4)