| 标题 |
Characteristics of β-(AlxGa1−x)2O3/Ga2O3 dual-metal gate modulation-doped field-effect transistors simulated by TCAD |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Vacuum Science & Technology B 作者:Xiaole Jia; Yibo Wang; Cizhe Fang; Bochang Li; Zhengdong Luo; et al 出版日期:2024 |
| 求助人 | |
| 下载 |
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(2025-6-4)