| 标题 |
In situ analysis of post-annealing effect on Sn-doped indium oxide films |
| 网址 | |
| DOI | |
| 其它 |
期刊:Journal of Applied Physics 作者:Hojoon Lim; Hyeok-Jun Yang; Ji Woong Kim; Jong-Seung Bae; Jin-Woo Kim; et al 出版日期:2016-12-01 |
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(2025-6-4)