| 标题 |
First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology |
| 网址 | |
| DOI | |
| 其它 |
期刊:2019 IEEE International Electron Devices Meeting (IEDM) 作者:H. Honjo; T. V. A. Nguyen; T. Watanabe; T. Nasuno; C. Zhang; et al 出版日期:2020-02-14 |
| 求助人 | |
| 下载 |
PDF的下载单位、IP信息已删除
(2025-6-4)