材料科学
电介质
相变
光电子学
电阻随机存取存储器
带隙
相(物质)
半导体
相变存储器
化学物理
纳米技术
物理化学
凝聚态物理
化学
电极
有机化学
物理
图层(电子)
作者
Ming‐Yang Wan,Yu‐Hui Tan,Xiao‐Wei Fan,Yun‐Zhi Tang,Jinfeng Jia,Fang‐Xing Wang,Lijuan Wang,Juan Liao
标识
DOI:10.1002/slct.202301981
摘要
Abstract Organic‐inorganic hybrid multifunctional materials have received significant attention due to their potential applications in smart devices such as phase‐change memory (PCM), resistive random‐access memory (ReRAM). Yet, devices application requires achieving a balance between fast switching speeds, long‐term stability, and high cycling endurance in materials still facing difficulties. Herein, we report two hybrid phase transition compounds: (CMQ)BiCl 5 (CMQ=Chloromethyl Quinuclidin‐3‐one) ( 1) and (FMQ) 2 SbBr 5 (FMQ=Fluoromethyl Quinuclidin‐3‐one) ( 2 ), both two compounds exhibit high phase transition temperature, dual‐stable behavior in dielectric during reversible phase transition process. Notably, 1 exhibit small dielectric change after multiple dielectric state switching. Furthermore, investigate the influence of halogen substitution (F to Cl) for compound properties, which show an Increasing transition temperature (9 K) and raising structural dimension (0D to 1D). Additionally, using first principles, analyze the electronic structure of 1 and find that it has a 3.4 eV wide bandgap, closing to GaN semiconductor (3.4 eV). This work provides a new insight into developing the next‐generation phase transition compounds and chemical modification enhances material performance.
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