量子隧道
等离子体子
电子
激发态
光电子学
激发
物理
表面等离子体子
超短脉冲
材料科学
纳米技术
激光器
光学
原子物理学
量子力学
作者
Jibo Tang,Quanbing Guo,Yu Wu,Junhao Ge,Shunping Zhang,Hongxing Xu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-01-16
卷期号:18 (4): 2541-2551
被引量:16
标识
DOI:10.1021/acsnano.3c08628
摘要
Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.
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