1D-(GaN/AlN)/2D-Gr/3D-(SiO2/Si) Combined High-Performance Flash Memory Device

Recent advancements have shown that flash memory devices made from entirely two-dimensional (2D) materials exhibit nice performance in terms of storage window, switching speed, and extinction ratio. However, these devices still face challenges such as low carrier density, environmentally sensitive, and difficulty in integration due to the properties of 2D material channels. Here, we propose a novel nonvolatile memory device based on a floating-gate field effect transistor, which integrates one-dimensional (1D) GaN/AlN microwire with 2D few-layer graphene (Gr) to combine the advantages of both materials. By forming a linear-direction 2D electron gas in the GaN channel layer and precise interface of GaN/AlN/Graphene, our memory device achieves a fast switching speed (5 ms) and demonstrates long-term stability (>12,000 cycles; >600 s). This makes it suitable for high-performance type conversion memory and reconfigurable inverter logic circuits, indicating a promising application potential for the integration device of hybrid-dimensional materials.