Effects of doping profile and temperature on the bifacial solar cell performances

In this paper, an optimization of a bifacial silicon solar cell structure is presented. This study takes into account the effects of temperature and doping level of each region of the device. As the simulation with the COMSOL software allowed us to demonstrate the link between the technological structure of a bifacial N+NPP+ type solar cell and the various characteristics and parameters obtained at the output when it is subjected to a polarization. Thus, we considered different doping levels and thicknesses of the N+ and P+ layers. It has been observed, for the emitter region, that the effects of temperature are negligible for low doping levels of the N + layer. However, in heavy doping, the benefit of reducing its thickness below O.018μm is demonstrated, especially for the high temperature operating range. Concerning the p + layer located on the back face (forming the base) of the solar cell, the increasing in its doping level and its thickness improves the efficiency. However, increasing the temperature tends to reduce it, especially for high doping levels.