光致发光
钙钛矿(结构)
结构精修
材料科学
带隙
兴奋剂
卤化物
晶体结构
八面体
镧
离子
结晶学
化学
无机化学
光电子学
有机化学
作者
Aadil Ahmad Bhat,Shakeel Ahmad Khandy,Atif Mossad Ali,Radha Tomar
标识
DOI:10.1021/acs.jpclett.3c00522
摘要
Recent advances in bandgap engineering have increased the possibility of vacancy ordered double halide perovskites (VO-DHPs), Cs2SnX6 where X = Cl, Br, I with designable optoelectronic features. Doping with La3+ ions modulates the band gap from 3.8 to 2.7 eV, allowing a steady room temperature dual emission (PL) centered at 440 and 705 nm in Cs2SnCl6. Pristine Cs2SnCl6 and La:Cs2SnCl6 both have a crystalline cubic structure with a space symmetry of Fm3m. The cubic phase correlates well with the Rietveld refinement. SEM analysis confirms anisotropic development with huge micrometer-sized (>10 μm) truncated octahedral structures. DFT investigations show that the insertion of La3+ ions into the crystal lattice leads to the band splitting. The present study elaborates the experimental understanding of the dual PL emission properties of La:Cs2SnCl6 leaving a scope for detailed theoretical study on the origin of the complex electronic transitions involving f-orbital electrons.
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