Inherent Photogating in MoTe2 Transistors with Van der Waals Contacts

Emerging two-dimensional (2D) materials and their van der Waals (vdW) heterojunctions are promising for high-performance optoelectronics devices [1] . In this work, we exploited polymorphic nature of 2D MoTe 2 , including 2H semiconductor and 1T’ semimetal phases, integrated with low-energy vdW contacts to demonstrate novel and superior photoresponse in both phototransistor and photodiode configurations. Especially, 2H-MoTe 2 has intrinsic ambipolar charge transport with an inherent n-type photogating effect, giving rise to a reconfigurable photodetection. This work presents the potential of 2D MoTe 2 for future high-performance multi-functional optoelectronics.