Bi‐Directional Modification to Quench Detrimental Redox Reactions and Minimize Interfacial Energy Offset for NiO X /Perovskite‐Based Solar Cells

Abstract The quality of the buried heterojunction of nickel oxide (NiO X )/perovskite is crucial for efficient charge carrier extraction and minimizing interfacial non‐radiative recombination in inverted perovskite solar cells (PSCs). However, NiO X has limitations as a hole transport layer (HTL) due to energy level mismatch, low conduction, and undesirable redox reactions with the perovskite layer, which impede power conversion efficiency (PCE) and long‐term stability. In this study, para‐amino 2,3,5,6‐tetrafluorobenzoic acid (PATFBA) is proposed as a bifacial defect passivator to tailor the NiO X /perovskite interface. The acid group and adjacent fluorine atoms of PATFBA effectively passivate NiO X surface defects, thereby improving its Ni 3+ /Ni 2+ ratio, hole extraction capability, and energy band alignment with perovskite, while also providing active sites for homogenous nucleation. Meanwhile, the amine and adjacent fluorine atomsstabilize the buried perovskite interface by passivating interfacial defects, resulting in higher crystalline perovskite films with supressed non‐radaitive recombination. Furthermore, the PATFBA buffer layer prevents redox reactions between Ni 3+ and perovskite.These synergistic bi‐directional interactions lead to optimized inverted PSCs with a PCE of 20.51% compared to 16.89% for pristine devices and the unencapsulated PATFBA‐modified devices exhibit outstanding thermal and long‐term stability. This work provides a new engineering approach to buried interfaces through the synergy of functional groups.