Anomalous Reconfigurable‐Transport in MoS 2 Transistors by Electrically‐Switchable van der Waals Interfacial Dipole

transistors due to the switching of vdW dipole and its competition with the electrostatic gating. By varying the BiOCl thickness, the n-type, p-type, anti-ambipolar, and "W"-shaped transfer characteristics are achieved. Furthermore, a dual-gate configuration further enhances functionality of the device, enabling multi-state switching, which is of particularly interest for these applications requiring negative differential resistance. This work offers a scalable, versatile, and non-destructive strategy for tuning reconfigurable two-dimensional transistors.