串联
钙钛矿(结构)
材料科学
光电子学
硅
晶体硅
能量转换效率
钝化
溅射
太阳能电池
非晶硅
纳米技术
图层(电子)
薄膜
化学工程
复合材料
工程类
作者
Zhiqin Ying,Xi Yang,Jingming Zheng,Jingsong Sun,Jingwei Xiu,Yudong Zhu,Xin‐Long Wang,Ying Chen,Xin Li,Jiang Sheng,Chunhui Shou,Zhenhai Yang,Hui Pan,Jichun Ye,Zhubing He
出处
期刊:Solar RRL
[Wiley]
日期:2022-10-26
卷期号:6 (12)
被引量:5
标识
DOI:10.1002/solr.202200793
摘要
The single‐crystalline silicon solar cell with tunnel oxide passivating poly‐Si contact (TOPCon) has developed into one of the most promising and high‐performance n‐type Si‐based solar cells in their mass production way because of its high conversion efficiency and robustness. Owing to its unique device structure, TOPCon shows superior advantages over amorphous Si‐based heterojunction one (HJT) in developing high‐performance monolithic perovskite/silicon tandem solar cell because TOPCon may have better tolerance than HJT to the particle bombardments and plasma fluorescence irradiations in the sputtering deposition process of transparent conductive oxide (TCO) recombination layer. Herein, bathocuproine (BCP):silver complex is introduced as a buffer recombination contact between TCO and poly‐SiC X , to modulate the tunneling junction between perovskite/TOPCon. Depending on fine film thickness and derived energy level tuning, BCP:Ag buffer layer can effectively prevent the sputter bombardments and passivate the interface of TCO/poly‐SiC X (n)/SiO X contact, as well as enhancing electron transport. As a result, a certified conversion efficiency of 25.84% is achieved in the monolithic perovskite/TOPCon silicon tandem solar cell. This work definitely paves a new and promising way to develop high‐performance monolithic perovskite/c‐Si tandem solar cells.
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