Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design

In order to achieve reliability improvement in metal–oxidesemiconductor field-effect transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The lightly doped drain (LDD) region in asymmetric MOSFET acts as effective heat sink due to high thermal conductivity of LDD region, and self-heating effect (SHE) is consequently improved. In addition, it has been demonstrated that the proposed asymmetric MOSFET also has advantage of hot-carrier injection (HCI) and on-current variation (ΔION) due to its structure. In order to validate the proposed asymmetric MOSFET, technology computer-aided design (TCAD) simulation is conducted through Synopsys Sentaurus simulation tool. As a result, by utilizing the structure of asymmetric MOSFET, SHE is remarkably improved from 460 K to 392 K, and HCI is reduced by about 50 times, and ΔION is also simultaneously improved.