二氧化二钒
钒
溅射沉积
材料科学
纹理(宇宙学)
薄膜
腔磁控管
溅射
冶金
纳米技术
计算机科学
人工智能
图像(数学)
作者
Xiongbang Wei,Zhiming Wu,Xiangdong Xu,Tao-Wang,Jingjing Tang,Weizhi Li,Yadong Jiang
标识
DOI:10.1088/0022-3727/41/5/055303
摘要
Vanadium dioxide (VO2) films with thicknesses of 80, 440 and 1000 nm were deposited on glass substrates by reactive dc magnetron sputtering. The crystallization, surface morphology and structural features were studied by x-ray diffraction, atomic force microscope and scanning electron microscope. Results revealed that the structural features of VO2 films strongly depend on the film thickness. The grain size and the crystallization extent increase with the increase in film thickness. The growth of VO2 was demonstrated to be an obvious 'columnar' growth perpendicular to the surface of the glass substrate. Analyses of square resistance and its temperature dependence demonstrated that the thickness of VO2 films plays an important role in their electric properties. With increasing film thickness, the square resistance decreases, the temperature coefficient of the square resistance increases and the metal–semiconductor phase transition becomes obvious.
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