Electrically induced change in HfO2/1-monolayer TiO2/SiO2 metal-oxide-semiconductor stacks: capacitance–voltage and hard X-ray photoelectron spectroscopy studies

Abstract Metal-oxide-semiconductor capacitors with HfO 2 /1-monolayer TiO 2 /SiO 2 stacks were examined to explore the origin of the interface dipole modulation. The capacitance–voltage ( C–V ) measurements exhibited that the polarity of the interface dipole layer changes depending on the gate bias. The hard X-ray photoelectron spectroscopy measurements demonstrated that an applied gate voltage induces small changes in the Ti–O chemical bonding and potential profile around the HfO 2 /SiO 2 interface.