Achieving high-performance in situ fabricated FAPbBr3 and electroluminescence.

Currently, metal halide perovskite films still encounter the issues of inferior film quality and interfacial electrical properties when they were constructed electroluminescence devices. Herein, efficient and pinhole-free perovskite emissive film was obtained on the poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer modified by an ultrathin LiF layer. Owing to the synergetic effect of the LiF interlayer, including better regulation of the perovskite film and a more balanced charge injection capability, an efficient green light-emitting diode based on the perovskite film was achieved with a maximum current efficiency of 25.6 cd/A, which is 58% higher than that of the control device with a plasma-treated PEDOT:PSS layer. Our results not only provide a facile strategy for acquiring efficient perovskite films but also circumvent the expensive and time-consuming plasma treatment process commonly used to improve the wetting properties of the underlying films.