CNTFET Based Grounded Active Inductor for Broadband Applications

A new carbon nanotube field effect transistor (CNTFET) based grounded active inductor (GAI) circuit is presented in this work. The suggested GAI offers a tunable inductance with a very wide inductive bandwidth, high quality factor (QF) and low power dissipation. The tunability of the realized circuit is achieved through CNTFET based varactor. The proposed topology shows inductive behavior in the frequency range of 0.1–101 GHz and achieves to a maximum QF of 9125. The GAI operates at 0.7 V with 0.337 mW of power consumption. To demonstrate the performance of GAI, a broadband low noise amplifier (LNA) circuit is designed by utilizing the GAI based input matching-network. The realized LNA provides high frequency bandwidth (17.5–57 GHz), low noise figure (