Effect of via depth on the TSV filling process for different current densities

Through-silicon-via (TSV) filling with optimum electrodeposition parameters is still a challenge in the industry, especially for via with different depths. Herein, the effects of via depth on optimum current density and filling patterns were investigated. It was found that the deeper the via, the lower the optimum current density. At low current density (4 mA cm−2), the via depth only affects the size of the defect, but does not change the filling pattern. However, at medium current density (7 mA cm−2), the filling pattern changes from super-conformal filling to sub-conformal filling with the increase of via depth, the pinch-off position remaining constant at a depth of about 70 µm from the top surface. Simulations of the TSV filling process using COMSOL modeling software revealed that the local concentration of additives, which is affected by the via depth, determine the morphology of the electrodeposition, matching well the experimental results.