60-3:Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display

SID Symposium Digest of Technical PapersVolume 47, Issue 1 p. 820-822 Book 2: Session 60: New TFTs 60-3: Distinguished Paper: Oxide Vertical TFTs for the Application to the Ultra High Resolution Display Hye-In Yeom, Hye-In Yeom Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorGeumbi Moon, Geumbi Moon Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorYunyong Nam, Yunyong Nam Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJong-Beom Ko, Jong-Beom Ko Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorSeung-Hee Lee, Seung-Hee Lee Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJunyong Choe, Junyong Choe Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJi Hoon Choi, Ji Hoon Choi Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this authorChi-Sun Hwang, Chi-Sun Hwang Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this authorSang-Hee Ko Park, Sang-Hee Ko Park Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this author Hye-In Yeom, Hye-In Yeom Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorGeumbi Moon, Geumbi Moon Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorYunyong Nam, Yunyong Nam Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJong-Beom Ko, Jong-Beom Ko Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorSeung-Hee Lee, Seung-Hee Lee Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJunyong Choe, Junyong Choe Korea Advanced Institute of Science and Technology, Daejeon, Republic of KoreaSearch for more papers by this authorJi Hoon Choi, Ji Hoon Choi Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this authorChi-Sun Hwang, Chi-Sun Hwang Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this authorSang-Hee Ko Park, Sang-Hee Ko Park Electronics and Telecommunications Research Institute, Daejeon, Republic of KoreaSearch for more papers by this author First published: 25 May 2016 https://doi.org/10.1002/sdtp.10799Citations: 19AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract The ultra-high resolution display is in demand as virtual reality (VA) and augmented reality (AR) displays, and hologram display become much more important. We present vertical TFTs for the application to the driving TFT of ultra-high resolution display. The IGZO deposited by sputtering and InOx deposited by means of plasma-enhanced atomic layer deposition (PEALD) have been adopted as the channel layers. While the IGZO vertical TFT shows on-current of 0.23 mA at Vg = 5 V and Vds = 2.1 V, that of InOx TFT shows 1.26 mA at the same driving condition. Citing Literature Volume47, Issue1Issue 1, San Francisco, CA, May 22–May 27, 2016May 2016Pages 820-822 RelatedInformation