3D hierarchical local heterojunction of MoS2/FeS2 for enhanced microwave absorption

Layered transition metal dichalcogenide (TMD) such as MoS2 are becoming promising microwave absorbers due to their large surface area, good flexibility, and well electrical and mechanical properties. However, it still remains a great challenge to optimize local microstructure in nanoscale so that contribute to more excellent performance 2D material-based microwave absorbers. Herein, a three-dimensional (3D) hierarchical MoS2/FeS2 composite with local face-to-face connected heterojunction was developed via a facile hydrothermal method. Electron holography convincingly confirmed that both the compact ohmic contact and local electric field were formed in the region of MoS2/FeS2 heterojunction, which contributed to the interface polarization loss capacity greatly. Therefore, a maximum reflection loss value of 60.2 dB at 8.08 GHz and effective absorption bandwidth up to 6.48 GHz (from 11.52 to 18 GHz) were successfully achieved with the thickness of only 2 mm. These encouraging accomplishments offer an avenue for the rational design of high-performance microwave absorbers based on 2D materials.