1.2 kV GaN Schottky barrier diodes on free-standing GaN wafer using a CMOS-compatible contact material

In this paper, we report the formation of vertical GaN Schottky barrier diodes (SBDs) on a 2-in. free-standing (FS) GaN wafer, using CMOS-compatible contact material. By realizing an off-state breakdown voltage VBR of 1200 V and an on-state resistance Ron of 7 mΩ·cm2, the FS-GaN SBDs fabricated in this work achieve a power device figure-of-merit of 2.1 × 108 V2·Ω−1·cm−2 on a high quality GaN wafer. In addition, the fabricated FS-GaN SBDs show the highest Ion/Ioff current ratio of ∼2.3 × 1010 among the GaN SBDs reported in the literature.