带隙基准
电气工程
电压基准
温度系数
电压
放大器
灵敏度(控制系统)
直线(几何图形)
电流镜
材料科学
电流(流体)
光电子学
物理
拓扑(电路)
CMOS芯片
晶体管
电子工程
工程类
数学
跌落电压
几何学
作者
Wenbin Huang,Lianxi Liu,Zhangming Zhu
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2020-07-07
卷期号:68 (1): 121-125
被引量:67
标识
DOI:10.1109/tcsii.2020.3007195
摘要
This brief presents a low-power and high-precision bandgap voltage and current reference (BGVCR) in one simple circuit for battery-powered applications. All the amplifiers have been eliminated in the proposed circuit. The voltage reference is derived from the bandgap topology, and the current reference is obtained by summing a proportional-to-absolute-temperature (PTAT) current and a complementary-to-absolute-temperature (CTAT) current. Therefore, the temperature coefficient of the current reference can be optimized. Besides, a pseudo-cascode structure and a simple line sensitivity enhancement circuit are adopted to improve the current mirror accuracy and line sensitivity. The proposed circuit is fabricated in a 0.18-μm deep N-well CMOS process with an active area of 0.063 mm 2 . The measured VREF and IREF are 1.2 V and 51 nA, respectively. The VREF and IREF show measured average temperature coefficients of 32.7 ppm/°C and 89 ppm/°C at a temperature of -45 to 125°C and standard deviations of 0.17 % and 1.15 %, respectively. In the supply voltage range of 2 to 5 V, the line sensitivities of voltage and current are 0.058%/V and 1.76%/V, respectively. The minimum supply voltage is 2 V with a total power consumption of 192 nW at room temperature.
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