等离子体增强化学气相沉积
钝化
材料科学
硅
兴奋剂
化学气相沉积
非晶硅
沉积(地质)
晶体硅
结晶度
光电子学
纳米技术
图层(电子)
复合材料
古生物学
生物
沉积物
作者
Wen‐Hao Chen,Thien N. Truong,Hieu T. Nguyen,Christian Samundsett,Sieu Pheng Phang,Daniel Macdonald,Andrés Cuevas,Lang Zhou,Yimao Wan,Donghang Yan
标识
DOI:10.1016/j.solmat.2019.110348
摘要
This paper describes the influence of plasma enhanced chemical vapor deposition (PECVD) deposition temperature on heavily doped silicon based (doped-Si/SiOx) passivating contacts for silicon solar cells. The doped-Si films are obtained by PECVD intrinsic amorphous silicon (a-Si) and a subsequent thermal POCl3 diffusion process. By changing the deposition temperature of PECVD, a-Si films with different degrees of crystallinity and density can be obtained. These differences between the a-Si films result in different properties of the passivating contacts in terms of passivation quality and carrier selectivity. By exploring a range of PECVD deposition temperatures from 250 °C to 470 °C, the best passivation quality is obtained at a temperature of 420 °C. On the other hand, the contact resistivity decreases with increasing deposition temperature. After studying the a-Si properties and the resulting passivating contact properties, we obtain optimal passivating contacts with a high implied open-circuit voltage (iVoc) of 742 mV and a low contact resistivity ρc of 6.4 mΩ∙cm2.
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