光电探测器
材料科学
光电流
光电子学
Crystal(编程语言)
X射线光电子能谱
单晶
半导体
薄膜
暗电流
光学
纳米技术
化学
结晶学
物理
计算机科学
核磁共振
程序设计语言
作者
Qinghua Ren,Wenhui Xu,Zhongshan Shen,Tiangui You,Qiang Liu,Chenhe Liu,Lantian Zhao,Lingli Chen,Yu Wang
出处
期刊:ACS applied electronic materials
[American Chemical Society]
日期:2020-12-28
卷期号:3 (1): 451-460
被引量:18
标识
DOI:10.1021/acsaelm.0c00990
摘要
A solar-blind photodetector based on single crystal β-Ga2O3 thin film transferred on a SiC substrate with an Al2O3 buffer layer was prepared by a unique ion-cutting process. The structure and micromorphology of the transferred single crystal Ga2O3 film was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy, respectively. Then, a photodetector with a metal–semiconductor–metal (MSM) structure was fabricated. The photodetector performance of the MSM photodetector cells based on the ion-cutting single crystal Ga2O3 thin film reveals an excellent solar-blind photodetector performance such as high spectra selectivity, extremely low dark current (28.7 pA at 10 V), high photocurrent (27.4 nA at 10 V), high sensitivity to 254 nm UV light with a photocurrent-to-dark current ratio of 953, relatively fast response time, and excellent stability. Furthermore, the inner mechanism was systematically discussed. This work not only paves a way to fabricate high-performance photodetectors based on single crystal semiconductor films but also opens up the opportunities of Ga2O3 single crystal film for a variety of photonic and electronic applications in optical positioning, tracking, imaging, and communications.
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