材料科学
温度循环
湿度
动力循环
碳化硅
复合材料
光电子学
扫描电子显微镜
腐蚀
法律工程学
加速老化
可靠性(半导体)
冶金
功率(物理)
热的
工程类
热力学
物理
量子力学
气象学
作者
Yanhao Wang,Erping Deng,Lixin Wu,Yuxing Yan,Yushan Zhao,Yuehui Huang
出处
期刊:IEEE Transactions on Components, Packaging and Manufacturing Technology
[Institute of Electrical and Electronics Engineers]
日期:2022-11-01
卷期号:12 (11): 1781-1790
被引量:8
标识
DOI:10.1109/tcpmt.2022.3223957
摘要
Power cycling test (PCT) is widely used to accelerate power semiconductor device aging and assess its packaging reliability. Standard PCT only considers thermomechanical stress and neglects the effect of humidity from the environment. In this article, the power cycling lifetime of three groups [Group 1: devices under test (DUTs) preaged with 3600-h high-voltage high-humidity high-temperature reverse bias test (HV-H3TRB), Group 2: DUTs preaged with 3600-h high-temperature high-humidity storage, and Group 3: DUTs without preaging] is compared to explore the contribution of high humidity and high voltage. The results show that Groups 1 and 2 have a shorter lifetime, and the shape factor of Group 2 in Weibull analysis drops below 1, indicating that a sign of infant mortality and moisture is the root cause. After decapsulation, optical inspection, and scanning electron microscope (SEM), it is found that the bubbles form at edge termination, and the corrosion signs of moisture appear on the chip surface and bond wire in DUTs of Groups 1 and 2. This phenomenon is caused by the elements of C, O, and Si migration and deposition on the bond wire, which radically come from epoxy molding compound (EMC) and finally result in a shorter power cycling lifetime of discrete silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs).
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