神经形态工程学
异质结
光电子学
材料科学
可扩展性
计算机科学
电子工程
人工神经网络
人工智能
工程类
数据库
作者
Xuanyu Shan,Chenyi Zhao,Ya Lin,Jilin Liu,Xiaohan Zhang,Ye Tao,Chunliang Wang,Xiaoning Zhao,Zhongqiang Wang,Haiyang Xu,Yichun Liu
摘要
Optoelectronic synapses are considered to be important cornerstones in the construction of neuromorphic computing systems because of their low power consumption, high operating speeds, and high scalability. In this work, we demonstrate an optoelectronic synaptic device based on a ZnO/HfOx heterojunction in which optical potentiation/electrical depression behaviors and nonvolatile high current state can be implemented. The heterojunction device exhibits conductance evolution with high linearity. The excellent optoelectronic memristive behavior of the device can be attributed to the interface barrier between ZnO and HfOx, which hinders the recombination of photo-excited electron–hole pairs to increase the carrier lifetime, and realizes the nonvolatile high current state. More importantly, the artificial vision system based on optoelectronic synaptic devices can achieved a high recognition accuracy of 96.1%. Our work provides a feasible pathway toward the development of optoelectronic synaptic devices for use in high-performance neuromorphic vision systems.
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