系统间交叉
共发射极
有机发光二极管
材料科学
激子
量子效率
光电子学
荧光
光致发光
光化学
激发态
纳米技术
光学
化学
原子物理学
单重态
物理
凝聚态物理
图层(电子)
作者
Chengwei Lin,Pengbo Han,Fenlan Qu,Shu Xiao,Xianfeng Qiao,Dezhi Yang,Yanfeng Dai,Qian Sun,Anjun Qin,Ben Zhong Tang,Dongge Ma
标识
DOI:10.1002/adom.202300361
摘要
Abstract Aggregation‐induced emission (AIE) materials are attractive for the fabrication of high‐efficiency organic light‐emitting diodes (OLEDs) owing to the “hot exciton” process by reverse intersystem crossing (hRISC) and high photoluminescence quantum yields (PLQY). However, the internal conversion (IC) from the high‐lying triplet excitation states (T n , n≥2) to the lower excited triplet state (T n‐1 ) is inevitable, resulting in severe exciton losses. Herein, an effective device structure is designed that reuses the lost triplet excitons caused by IC and realizes the breakthrough in the efficiency of blue fluorescence OLEDs based on AIE molecule as an emitter. The maximum external quantum efficiency reached as high as 14.8% and is kept at 14.4% at the luminance of 1000 cd m −2 . In the designed device, a triplet–triplet annihilation (TTA) up‐conversion material 1‐[2,5‐dimethyl‐4‐(1‐pyrenyl)phenyl]pyrene (DMPPP) is introduced into the AIE emitter as a triplet sensitizer to receive the lost triplet excitons, and a thin TTA up‐conversion layer 9‐[4‐(10‐phenyl‐9‐anthryl)phenyl]‐9H‐carbazole (CzPA) is introduced in the middle of the doped layer to form the emissive layer (EML). It is found that the hRISC process of iTPB‐2AC greatly enhances the utilization efficiency of TTA intermediate state ([TT]*) excitons on CzPA to iTPB‐2AC so that the utilization of the lost excitons is maximized. This work establishes physical insights into the AIE emission materials and device fabrication of high‐efficiency blue fluorescence OLEDs.
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