Optoelectronic properties of copper-fused Zn(1-) SCu grown nanofilms for solar cell devices

On glass substrates in a basic medium, Zn(1-x)SCux nanostructures were produced using a chemical bath approach for an adjusted dopant concentration (DC) (0.01–0.05 M) at 80 °C, and annealed at 300 °C for 2.5 h. The X-ray diffraction pattern revealed a α-ZnS phase in the produced films with a stronger diffraction peak at 31.775°. The creation of a high crystalline structure in the α-ZnS phase is confirmed by Raman spectral analysis. SEM images revealed a uniform and dense surface morphology with modest grain size sharing and no fractures. The existence of anticipated Zn, S, and Cu was detected by energy-dispersive X-ray spectroscopy. Spectrophotometry in the UV–visible range showed a redshift. Additionally, as DC is increased, the optical band gaps (3.82–3.99 eV) and transmittance were observed to increased. The projected crystallite sizes (3.58–2.45 nm) based on energy band gaps shrank as DC increased. Infrared spectroscopy using the Fourier transform did not reveal any contaminant signals. The electrical conductivity was p-type, according to the Hall Effect investigation.