Phase-Engineered WS2 Monolayer Quantum Dots by Rhenium Doping

过电位 材料科学 塔菲尔方程 单层 相(物质) 电催化剂 兴奋剂 化学物理 纳米技术 结晶学 物理化学 化学 光电子学 电化学 有机化学 冶金 电极
作者
Hoon Ju Lee,Myeonggi Choe,Weiguang Yang,Suk Woo Lee,Young Jin Park,Hyun-Tae Hwang,Manish Chhowalla,Zonghoon Lee,Hyeon Suk Shin
出处
期刊:ACS Nano [American Chemical Society]
卷期号:17 (24): 25731-25738 被引量:6
标识
DOI:10.1021/acsnano.3c11086
摘要

Transition metal dichalcogenides (TMDs) occur in the thermodynamically stable trigonal prismatic (2H) phase or the metastable octahedral (1T) phase. Phase engineering of TMDs has proven to be a powerful tool for applications in energy storage devices as well as in electrocatalysis. However, the mechanism of the phase transition in TMDs and the synthesis of phase-controlled TMDs remain challenging. Here we report the synthesis of Re-doped WS2 monolayer quantum dots (MQDs) using a simple colloidal chemical process. We find that the incorporation of a small amount of electron-rich Re atoms in WS2 changes the metal–metal distance in the 2H phase initially, which introduces strain in the structure (strained 2H (S2H) phase). Increasing the concentration of Re atoms sequentially transforms the S2H phase into the 1T and 1T′ phases to release the strain. In addition, we performed controlled experiments by doping MoS2 with Re to distinguish between Re and Mo atoms in scanning transmission electron microscopy images and quantified the concentration range of Re atoms in each phase of MoS2, indicating that phase engineering of WS2 or MoS2 is possible by doping with different amounts of Re atoms. We demonstrate that the 1T′ WS2 MQDs with 49 at. % Re show superior catalytic performance (a low Tafel slope of 44 mV/dec, a low overpotential of 158 mV at a current density of 10 mA/cm2, and long-term durability up to 5000 cycles) for the hydrogen evolution reaction. Our findings provide understanding and control of the phase transitions in TMDs, which will allow for the efficient manufacturing and translation of phase-engineered TMDs.
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