四方晶系
图层(电子)
氧化物
膜
材料科学
异质结
结晶学
光电子学
化学工程
纳米技术
化学
冶金
晶体结构
工程类
生物化学
作者
J. Zhang,Tsung-Han Lin,A. F. Wang,Xiaochao Wang,Qiang He,H. Q. Ye,Jingdi Lu,Hongtao Wang,Zhengguo Liang,Jinchao Feng,Shengru Chen,Minghui Fan,Er‐Jia Guo,Qinghua Zhang,Lin Gu,Zhenlin Luo,Liang Si,Wenbin Wu,Lingfei Wang
出处
期刊:Science
[American Association for the Advancement of Science (AAAS)]
日期:2024-01-26
卷期号:383 (6681): 388-394
被引量:2
标识
DOI:10.1126/science.adi6620
摘要
Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale freestanding oxide membranes, which offer attractive functionalities and integrations with advanced semiconductor technologies. Here, we introduce a water-soluble sacrificial layer, “super-tetragonal” Sr 4 Al 2 O 7 (SAO T ). The low-symmetric crystal structure enables a superior capability to sustain epitaxial strain, allowing for broad tunability in lattice constants. The resultant structural coherency and defect-free interface in perovskite ABO 3 /SAO T heterostructures effectively restrain crack formation during the water release of freestanding oxide membranes. For a variety of nonferroelectric oxide membranes, the crack-free areas can span up to a millimeter in scale. This compelling feature, combined with the inherent high water solubility, makes SAO T a versatile and feasible sacrificial layer for producing high-quality freestanding oxide membranes, thereby boosting their potential for innovative device applications.
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