光学
材料科学
折射率
衰减系数
克尔效应
氮化硅
非线性光学
反射系数
硅
非线性系统
光电子学
物理
激光器
量子力学
作者
Dharma P. Permana,Yvan Klaver,Alexander Agustinus Iskandar,David A. I. Marpaung
出处
期刊:Optics Letters
[Optica Publishing Group]
日期:2025-04-28
卷期号:50 (11): 3616-3616
被引量:1
摘要
Multi-layer Si 3 N 4 waveguides, also known as Triplex waveguide technology, are a very promising waveguide platform for applications in microwave photonics and quantum photonics due to their low loss and compact circuit footprint. However to date, the Kerr nonlinearity of these multi-layer waveguides, in particular the asymmetric double-stripe (ADS) Si 3 N 4 waveguides, has not been well-investigated. Here, we performed an experimental investigation of the Kerr nonlinearity of ADS Si 3 N 4 waveguides through four-wave mixing (FWM) experiments. We obtained the nonlinear coefficient for this waveguide to be γ ADS = 0.336 ± 0.023 W -1 m -1 . When combined with low propagation loss and absence of two-photon absorption, this moderate nonlinearity can be harnessed for chip-based nonlinear signal processing and quantum photonics.
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