Research on the reliability theory and lifetime prediction model of IGCT gate driver

Integrated gate commutated thyristor (IGCT) is a kind of core power semiconductor device in high-power applications such as renewable energy power generation and DC grids, which has competitive characteristics of high blocking voltage, large capacity and low loss. The existing theories and experiments show that gate driver is the key to the reliability of IGCT. Thus, in this paper, the reliability theory and lifetime prediction model is carefully researched. First, the failure mechanisms and failure modes of key components and printed circuit board of IGCT gate driver are analyzed. Based on that, the reliability models of key components such as capacitors, MOSFETs and solder joints in gate driver are built, followed by the overall reliability model of gate driver. Then the lifetime of IGCT gate driver under typical working conditions of DC grids is calculated, which is above 30 years. And the aluminum electrolytic capacitor is the crucial factor affecting the lifetime of gate driver. Finally, some optimization methods are proposed to lead the future design of IGCT gate driver.