Roughness Suppression in Electrochemical Nanoimprinting of Si for Applications in Silicon Photonics

Metal-assisted electrochemical nanoimprinting (Mac-Imprint) scales the fabrication of micro- and nanoscale 3D freeform geometries in silicon and holds the promise to enable novel chip-scale optics operating at the near-infrared spectrum. However, Mac-Imprint of silicon concomitantly generates mesoscale roughness (e.g., protrusion size ≈45 nm) creating prohibitive levels of light scattering. This arises from the requirement to coat stamps with nanoporous gold catalyst that, while sustaining etchant diffusion, imprints its pores (e.g., average diameter ≈42 nm) onto silicon. In this work, roughness is reduced to sub-10 nm levels, which is in par with plasma etching, by decreasing pore size of the catalyst via dealloying in far-from equilibrium conditions. At this level, single-digit nanometric details such as grain-boundary grooves of the catalyst are imprinted and attributed to the resolution limit of Mac-Imprint, which is argued to be twice the Debye length (i.e., 1.7 nm)-a finding that broadly applies to metal-assisted chemical etching. Last, Mac-Imprint is employed to produce single-mode rib-waveguides on pre-patterned silicon-on-insulator wafers with root-mean-square line-edge roughness less than 10 nm while providing depth uniformity (i.e., 42.9 ± 5.5 nm), and limited levels of silicon defect formation (e.g., Raman peak shift < 0.1 cm-1 ) and sidewall scattering.